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UGF09030 Datasheet

Part Number UGF09030
Manufacturers CREE
Logo CREE
Description 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Datasheet UGF09030 DatasheetUGF09030 Datasheet (PDF)

UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF9030 • Internally matched for repeatable manufacturing • High gain, high efficiency.

  UGF09030   UGF09030






26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF9030 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 870MHz GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.50dB Package Type 440095 PN: UGF9030F Package Type 440109 PN: UGF9030P Page 1 of 7 Specifications subject to change without notice http://cree.com/ UGF09030 Rev. 2 Maximum Ratings UGF09030 Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC.


2017-09-04 : L7582    ZMY30B    ZMY33B    ZMY36B    ZMY39B    ZMY43B    ZMY47B    ZMY51B    ZMY56B    ZMY62B   


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