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UNISONIC TECHNOLOGIES CO., LTD UF730
5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET
DESCRIPTION
The UF...
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD UF730
5.5A, 400V, 1.0 OHM, N-CHANNEL POWER
MOSFET
DESCRIPTION
The UF730 power
MOSFET is designed for high
voltage, high speed power switching applications such as switching power suppliess, switching adaptors.
MOSFET
1 TO-220
FEATURES
* 5.5A, 400V, Low RDS(ON)(1.0Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching
1
TO-220F
*Pb-free plating product number: UF730L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Package Normal Lead Free Plating UF730-TA3-T UF730L-TA3-T TO-220 UF730-TF3-T UF730L-TF3-T TO-220F Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE UF730L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
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1 of 6
QW-R502-077,A
UF730
ABSOLUTE MAXIMUM RATINGS (TC = 25 , Unless Otherwise Specified)
PARAMETER Drain to Source
Voltage (TJ =25 ~125 ) Drain to Gate
Voltage (RGS = 20kΩ) (TJ =25 ~125 ) Gate to Source
Voltage Continuous TC = 100 Drain Current Pulsed Maximum Power Dissipation Derating above 25 SYMBOL VDS VDGR VGS ID ID IDM PD RATINGS 400 400 ±20 6.5 3.5 22 93 0.6
MOSFET
UNIT V V V A A A W W/
Single Pulse Avalanche Energy Rating 300 mJ EAS (VDD=50V, starting TJ =25 , L=17mH, RG=25Ω, peak IAS = 5.5A) Operating Temperature Range TOPR -5...