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UBA1710M

NXP

Modulator for GaAs power amplifiers

INTEGRATED CIRCUITS DATA SHEET UBA1710M Modulator for GaAs power amplifiers Product specification Supersedes data of 19...


NXP

UBA1710M

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INTEGRATED CIRCUITS DATA SHEET UBA1710M Modulator for GaAs power amplifiers Product specification Supersedes data of 1997 Feb 18 File under Integrated Circuits, IC17 1997 Oct 17 Philips Semiconductors Product specification Modulator for GaAs power amplifiers FEATURES Power MOS modulators for control of GaAs power amplifier drain voltage Power control loop amplifier and MOS driver Voltage tripler for supply of MOS driver Positive-to-negative DC converter for GaAs power amplifier gate biasing. APPLICATIONS Control of GaAs power amplifiers for GSM and DCS hand-held transceivers. QUICK REFERENCE DATA SYMBOL VCC VDD ICC + IDD Tamb Note 1. For conditions, see Chapter “Characteristics”. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UBA1710M SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm PARAMETER(1) analog supply voltage digital supply voltage peak supply current in power-up mode operating ambient temperature MIN. 4.2 4.2 − −20 TYP. 4.8 4.8 12 − GENERAL DESCRIPTION UBA1710M The UBA1710M integrates the functions required to operate the GaAs Power Amplifiers (PAs) from the CGY20xx family which are intended for GSM and DCS applications. It includes a negative supply for PA gate biasing and most of the functions required to implement power control so that only a very few external component are required. The power control section integrates two power MOS devices for control of the PA drain voltages, an MOS driver and a feedback loop amp...




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