n-channel JFETs
designed for • • •
• VHF BuRer Amplifiers • IF Amplifiers
-
H
Siliconix
- ---
-----
Performance Cur...
n-channel JFETs
designed for
VHF BuRer
Amplifiers IF
Amplifiers
-
H
Siliconix
- ---
-----
Performance Curves NIP See Section 4
BENEFITS
High Gain gfs = 120,000 ,umho Typical
Wide Dynamic Range Low Intermodulation Distortion
c
W
oN
c
W
N
c
W N N
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate·Drain or Gate·Source
Voltage ................-25 V Gate Current ............................... 100 rnA Total Device Dissipation (25°C Case Temperature) ......3 W Power Derating (to 150°C) .................. 24 mWrC Storage Temperature Range .............. -55 to +150°C Operating Temperature Range............. -55 to +150°C Lead Temperature
(1/16" from case for 10 seconds) ...............300°C
TO-39 See Section 6
.~:
~
l s0
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
Characteristic
U320
U321
U322
Umt
Min Typ Max Min Typ Max M,n Typ Max
rest Conditions
1 -I
I~ s
I";
4
T A
15 T
I6
I
e
I]
IGSS
VGSloffl BVGSS lOSS VGS(I) 'OS(on)
Gate Reverse Current (Note 1)
Gate-Source Cutoff
Voltage Gate-Source Breakdown
Voltage Saturation Drain Current (Note 21 Gate-Source Forward
Voltage Drain-Source ON ReSistance
-2 -25 100
-3 -0 5 -10
500 1
10
8 9fs
1-
9 0 C1SS
I- V
10
N A
Crss
111 112 I':'::
M I
e
Cas Cgd
13 -en
Common-Source Forward Transconductance (Note 21
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
EqUivalent Short CirCUit Input NOise
Voltage
75 120 200
30
15 1...
