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TVR4J Datasheet

Part Number TVR4J
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
Datasheet TVR4J DatasheetTVR4J Datasheet (PDF)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type. · · · · Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V A A °C °C Aver.

  TVR4J   TVR4J






Part Number TVR4J
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description (TVR4J / TVR4N) FAST RECOVERY RECTIFIER
Datasheet TVR4J DatasheetTVR4J Datasheet (PDF)

www.datasheet4u.com BL GALAXY ELECTRICAL FAST RECOVERY RECT IFIER FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 TVR4J---TVR4N VOLTAGE RANGE: 600 ---1000 V CURRENT: 1.5 A DO - 15 MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band de.

  TVR4J   TVR4J







TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type. · · · · Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V A A °C °C Average forward current (Ta = 55°C ) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 3-4B1A Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Thermal resistance (junction to ambient) Symbol VFM IRRM trr Rth (j-a) IFM = 5 A VRRM = Rated IF = 20 mA, IR = 1 mA DC Test Condition Weight: 0.47 g (typ.) Min ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ Max 1.2 10 20 80 Unit V mA ms °C/W Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part. Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire. Marking Type Code Lot No. Code VR 4J Month (starting from alphabet A) Year (last number of the christian era) Cathode Mark Color: Silver VR4J VR4N Type TVR4J TVR4N 1 2002-09-18 TVR4J,TVR4N iF – vF 30 rth (j-a) – t Ta = 25°C 100 (A) 10 5 3 150 Tj = 25°C Instantaneous forward current Transient thermal .


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