New Product
TV050B...S4PT Series
Vishay General Semiconductor
PAR® Transient Voltage Suppressor Bare Die (50 mils x 50...
New Product
TV050B...S4PT Series
Vishay General Semiconductor
PAR® Transient
Voltage Suppressor Bare Die (50 mils x 50 mils)
a ce
db
A (2) C (1)
FEATURES
Junction passivation optimized design passivated anisotropic rectifier technology
300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package
Unidirectional polarity only
CIRCUIT DIAGRAM
A (2)
Notes (1) Front metallization side: Cathode (2) Back metallization side: Anode
C (1)
MECHANICAL DATA
DIMENSIONS in inches (millimeters)
TYPICAL TOTAL METAL THICKNESS
DEVICE (1)
ASSEMBLY
CHIP SIZE
SOLDERABLE
CHIP THICKNESS
FRONT SIDE C
BACK SIDE A
a, b min. max.
c, d min. max.
e METAL THICKNESS METAL THICKNESS
min. max.
TV050B...S4PT
0.048 0.050 0.039 0.041 0.011 0.013 Solderable (1.219) (1.270) (0.991) (1.041) (0.279) (0.330) Ni/Au
0.75 μm
Ni/Au
0.75 μm
Note (1) Refer to Device Code definition
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless o...