TT2190

isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV Horizontal Deflection Output Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 20 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector Sustain Voltage IC=100mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Emitter Cutoff Current VCE=1500V, RBE=0 hFE 1 DC Current Gain IC= 1A; VCE= 5V hFE 2 DC Current Gain IC= 5A; VCE= 5V VECF C-E Diode Forward Voltage IF=7A tf Fall Time IC= 3A, IB1= 0.6A; IB2= -1.2A TT2190 MIN TYP. MAX UNIT 800 V 3.0 V 1.5 V 40 1...