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TSU70R750S1 Datasheet

Part Number TSU70R750S1
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSU70R750S1 DatasheetTSU70R750S1 Datasheet (PDF)

TSD70R750S1/TSU70R750S1 700V 7A N-Channel SJ-MOSFET TSD70R750S1/TSU70R750S1 700V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. S.

  TSU70R750S1   TSU70R750S1






N-Channel MOSFET

TSD70R750S1/TSU70R750S1 700V 7A N-Channel SJ-MOSFET TSD70R750S1/TSU70R750S1 700V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • 750V @TJ = 150 ℃ • Typ. RDS(on) = 0.68Ω • Ultra Low gate charge (typ. Qg = 25nC) • 100% avalanche tested TSD70R750S1 TSU70R750S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Ava.


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