TSD70R750S1/TSU70R750S1 700V 7A N-Channel SJ-MOSFET
TSD70R750S1/TSU70R750S1
700V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. S.
N-Channel MOSFET
TSD70R750S1/TSU70R750S1 700V 7A N-Channel SJ-MOSFET
TSD70R750S1/TSU70R750S1
700V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
• 750V @TJ = 150 ℃ • Typ. RDS(on) = 0.68Ω • Ultra Low gate charge (typ. Qg = 25nC) • 100% avalanche tested
TSD70R750S1
TSU70R750S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Ava.