TSD70R2K4S1/TSU70R2K4S1 700V 2A N-Channel SJ-MOSFET
TSD70R2K4S1/TSU70R2K4S1
700V 2A N-Channel SJ-MOSFET
General Descri...
TSD70R2K4S1/TSU70R2K4S1 700V 2A N-Channel SJ-
MOSFET
TSD70R2K4S1/TSU70R2K4S1
700V 2A N-Channel SJ-
MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
750V @TJ = 150 ℃ Typ. RDS(on) = 2.1Ω Ultra Low gate charge (typ. Qg = 7nC) 100% avalanche tested
TSD70R2K4S1
TSU70R2K4S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source
Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source
voltage
Single Pulsed Avala...