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TSP7N65M Datasheet

Part Number TSP7N65M
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSP7N65M DatasheetTSP7N65M Datasheet (PDF)

TSP7N65M/TSF7N65M TSP7N65M/TSF7N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge top.

  TSP7N65M   TSP7N65M






N-Channel MOSFET

TSP7N65M/TSF7N65M TSP7N65M/TSF7N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 7A,650V,Max.RDS(on)=1.60Ω @ VGS =10V • Low gate charge(typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (.


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