TSP4N60M/TSF4N60M
TSP4N60M/TSF4N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using True...
TSP4N60M/TSF4N60M
TSP4N60M/TSF4N60M
600V N-Channel
MOSFET
General Description
This Power
MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
4.0A,600V,Max.RDS(on)=2.5 Ω @ VGS =10V Low gate charge(typical 16nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
...
