DatasheetsPDF.com

TSM2N7000

60V N-Channel Enhancement Mode MOSFET

Description

TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω General Description www.DataSheet4U.comThe TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable ...

Taiwan Semiconductor Company

Download TSM2N7000 Datasheet

Similar Datasheet

TSM2N7002KD 60V N-Channel MOSFET - Taiwan Semiconductor
TSM2N7002K 60V N-Channel MOSFET - Taiwan Semiconductor Company
TSM2N7002E 50V N-Channel Enhancement Mode MOSFET - Taiwan Semiconductor Company
TSM2N7002 60V N-Channel Enhancement Mode MOSFET - Taiwan Semiconductor Company
TSM2N7000K 60V N-Channel MOSFET - Taiwan Semiconductor Company

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)