TSM2832

TSM2832 20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ Pin assignment: 1. Gate 2. Drain 3. Source www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2832CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximum Rating (Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 C Ta = 75 oC o Limit 20V ±8 3.6 10 1.5 1.0 Unit V V A A W PD Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 - 55 to +150 o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rθja Limit 5 65 Unit S o C/W TSM2832 1-1 2003/12 rev. A Electrical Characteristics Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance www.DataSheet4U.com Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = ± 8V, VDS = 0V VDS ≧ 5V, VGS = 4.5V VDS = 5V, ID = 3....