TSM2323

TSM2323 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 39 @ VGS = -4.5V -20 52 @ VGS = -2.5V 68 @ VGS = -1.8V ID (A) -4.7 -4.1 -2.0 Features www.DataSheet4U.com Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. TSM2323CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit -20 ±8 -4.7 -20 -1.0 1.25 0.8 +150 - 55 to +150 Unit V V A A A W o o Ta = 25 C Ta = 70 C C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol RӨJC RӨJA Limit 75 250 Unit o o C/W C/W 1/6 Version: A07 TSM2323 20V P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage www.DataSheet4U.com Conditions VGS = 0V, ID = - 250uA VDS = VGS, ID = - 2...