TSM2321
-20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20V RDS (on), Vgs @ -...
TSM2321
-20V P-Channel Enhancement Mode
MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20V RDS (on), Vgs @ -4.5V, Ids @ -3.2A = 65mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A = 90mΩ
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Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No. TSM2321CX Packing Tape & Reel Package SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 75 oC
o
Symbol
VDS VGS ID IDM PD TJ TJ, TSTG
Limit
-20V ±10 -3.2 -11 1.25 0.8 +150 -55 to +150
Unit
V V A A W
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL Rθja
Limit
5 100
Unit
S
o
C/W
TSM2321
1-5
2005/06 rev. A
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter Static
Drain-Source Breakdown
Voltage Drain-Source On-State Resistance
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Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = -250uA VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.0A VDS = VGS, ID = -250uA VDS = -16V, VGS = 0V VGS = ±10V, VDS = 0V VDS = -5V, VGS = -4.5V VDS = -5...