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TSM2320
20V N-Channel Enhancement Mode MOSFET
Description
TSM2320 20V N-Channel Enhancement Mode
MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact...
Taiwan Semiconductor Company
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