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TSM2312
20V N-Channel Enhancement Mode MOSFET
Description
TSM2312 20V N-Channel
MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V Qg 20 33 40 51 11 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering I...
Taiwan Semiconductor Company
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