TSM2301B

TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain ID (A) -2.8 -2.0 -2.0 www.DataSheet4U.com Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. TSM2301BCX RF Package SOT-23 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -20 ±8 -2.8 -8 -0.72 0.9 0.57 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. c. Surface Mounted on FR4 Board, Symbol TL RӨJA Limit 5 120 Unit S o C/W 1/6 Version: A07 TSM2301B 20V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-S...