High Speed Infrared Emitting Diode
Description
TSHF4410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
FEATURES
Package type: leaded Package form: T-1 Dimensions (in mm): ∅ 3 Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity
94 8636
Angle of half intensity: ϕ = ± 22° Low forward voltage Sui...
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