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TSF840MR Datasheet

Part Number TSF840MR
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSF840MR DatasheetTSF840MR Datasheet (PDF)

TSF840MR TSF840MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features •.

  TSF840MR   TSF840MR






Part Number TSF840M
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSF840MR DatasheetTSF840M Datasheet (PDF)

TSP840M / TSF840M 500V N-Channel MOSFET General Description This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. .

  TSF840MR   TSF840MR







N-Channel MOSFET

TSF840MR TSF840MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 9.0A,500V,Max.RDS(on)=0.78 Ω @ VGS =10V • Low gate charge(typical 30nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak D.


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