TSF80R850S1 800V 6.6A N-Channel SJ-MOSFET
TSF80R850S1
800V 6.6A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FE...
TSF80R850S1 800V 6.6A N-Channel SJ-
MOSFET
TSF80R850S1
800V 6.6A N-Channel SJ-
MOSFET
General Description
Truesemi SJ-FET is new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
850V @TJ = 150 ℃ Typ. RDS(on) = 0.75Ω Ultra Low gate charge (typ. Qg = 25nC) 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source
voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current...