TSP730M / TSF730M
400V N-Channel MOSFET
General Description
This Pow er MOSFET is produced using Tr uesemi‘s advanced p...
TSP730M / TSF730M
400V N-Channel
MOSFET
General Description
This Pow er
MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.
Features
6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V Low gate charge ( typical 18nC) Fast wsitching 100% avalanche tested Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G ●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source
Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source
Voltage
EAS Single Pulsed Avalanche En...