TSF5N60M

www.DataSheet4U.net TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS Absolute Maximum Ratings Symbol VDSS ID Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) PD Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) 120 0.8 -55 ~ 150 300 (Note 1) 4.5 2.7 18 ±30 280 13 4.5 45 0.5 Parameter TSP5N60M TSF5N60M 600 4.5* 2.7* 18* Units V A A A V mJ mJ V/ns W W/ °C °C °C IDM VGS EAS EAR dv/dt TSTG, TJ TL Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ Thermal Resistance, Junction-t...