TSP11N60S / TSF11N60S/TSB11N60S 600V N-Channel MOSFET
September, 2013
SJ-FET
TSP11N60S/TSF11N60S /TSB11N60S 600V N-Channel MOSFET
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJF.
N-Channel MOSFET
TSP11N60S / TSF11N60S/TSB11N60S 600V N-Channel MOSFET
September, 2013
SJ-FET
TSP11N60S/TSF11N60S /TSB11N60S 600V N-Channel MOSFET
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.38Ω
• Ultra Low Gate Charge (typ. Qg = 35nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
TSB11N60S
11* 8.5*
IDM Drain Current - Pulsed
(Note 1)
40*
VGSS
Gate-Source voltage
EAS
.