TSB11N60S

TSP11N60S / TSF11N60S/TSB11N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP11N60S/TSF11N60S /TSB11N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. Features 650V @TJ = 150 ℃ Typ. RDS(on) = 0.38Ω Ultra Low Gate Charge (typ. Qg = 35nC) 100% avalanche tested Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB11N60S 11* 8.5* IDM Drain Current - Pulsed (Note 1) 40* VGSS Gate-Source voltage EAS ...