TSA60R070S1 600V 47A N-Channel SJ-MOSFET
TSA60R070S1
600V 47A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET ...
TSA60R070S1 600V 47A N-Channel SJ-
MOSFET
TSA60R070S1
600V 47A N-Channel SJ-
MOSFET
General Description
Truesemi SJ-FET is new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
650V @TJ = 150 ℃ Typ. RDS(on) = 60mΩ Ultra Low gate charge (typ. Qg = 170nC) 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source
Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source
voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive ...
