Part Number
|
TRW53601 |
Manufacturer
|
Advanced Semiconductor |
Description
|
NPN SILICON RF POWER TRANSISTOR |
Published
|
Sep 7, 2006 |
Datasheet
|
TRW53601 PDF File
|
Features
• Diffused Ballast Resistors
• Omnigold™ Metalization System
• Common Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C
.com
DataShee
-65 °C to +200 °C 31 °C/W
1 = COLLECTOR 2 = EMITTER ...
Similar Datasheet
INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ