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TPCT4202 Datasheet

Part Number TPCT4202
Manufacturers Toshiba
Logo Toshiba
Description Lithium Ion Battery Applications
Datasheet TPCT4202 DatasheetTPCT4202 Datasheet (PDF)

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  TPCT4202   TPCT4202






Part Number TPCT4204
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Field Effect Transistor Silicon N Channel MOS Type
Datasheet TPCT4202 DatasheetTPCT4204 Datasheet (PDF)

TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCT4204 Lithium Ion Secondary Battery Applications • • • • • • • Lead(Pb)-Free Small footprint due to small and thin package Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.) High forward transfer admittance: |Yfs| = (25) S (typ.) Low leakage current: ISSS = 10 µA (max) (VSS = 30 V) Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200 Common drain TENTATIVE Unit: mm 3.8±0.1 1 0.45 0.45 4 2.0±0.1 3 2 B 0..

  TPCT4202   TPCT4202







Part Number TPCT4203
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet TPCT4202 DatasheetTPCT4203 Datasheet (PDF)

TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCT4203 Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.) z High forward transfer admittance: |Yfs| = 18 S (typ.) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA) z Common drain Absolute Maximum Ratings (Ta = 25°C) Characteristic.

  TPCT4202   TPCT4202







Part Number TPCT4201
Manufacturers Toshiba
Logo Toshiba
Description Lithium Ion Battery Applications
Datasheet TPCT4202 DatasheetTPCT4201 Datasheet (PDF)

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  TPCT4202   TPCT4202







Lithium Ion Battery Applications

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2006-01-27 : AM2965    AM2966    BVS-301RE4    BVS-301QS4    BVS-301ET4    BVS-301TB4    BVS-301QA4    BVS-301QF4    BVS-301QH4    BVS-301QM4   


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