MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8134
1. Applications
• Lithium-Ion Secondary Batteries • Power Management Swit...
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8134
1. Applications
Lithium-Ion Secondary Batteries Power Management Switches
2. Features
(1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
TPC8134
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage Gate-source
voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature
(t = 10 s) (t = 10 s)
(Note 1) (Note 1) (Note 2) (Note 3) (Note 4)
VDSS VGSS
ID IDP PD PD EAS IAR Tch Tstg
-40
V
-25/+20
-5
A
-20
1.9
W
1.0
W
11
mJ
-5
A
150
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") a...