TPC8032-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPC8032-H
High-Efficiency DC/DC Convert...
TPC8032-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPC8032-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Drain-source
voltage
Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation
(t = 10 s) (Note 2a)
Drain power dissipation
(t = 10 s) (Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
PD
EAS IAR EAR Tch Tstg
30 30 ±20 15 60 1.9
1.0
146 15 0.12 150 −55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit V V V A
W
W
mJ A mJ °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the...