TP0101TS

TP0101T/TS Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY ID (A) VDS (V) –20 rDS(on) (W) 0.65 @ VGS = –4.5 V 0.85 @ VGS = –2.5 V TP0101T –0.6 –0.5 TP0101TS –1.0 –0.9 FEATURES D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching–Cell Phones, Pagers TO-236 (SOT-23) Top View G 1 3 S 2 D Marking Code: TP0101T: POwll TP0101TS: PSwll w = Week Code l = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg TP0101T –20 "8 –0.6 –0.48 –3 –0.6 0.35 0.22 –55 to 150 TP0101TSc –20 "8 –1.0 –0.8 –3 –1.0 1.0 0.65 –55 to 150 Unit V A Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead ...