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TN4035-600G

ST Microelectronics

40A SCRs

www.DataSheet4U.com ® TN4035-600G 40A SCRs MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 40 600 35 Unit A V mA G ...


ST Microelectronics

TN4035-600G

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www.DataSheet4U.com ® TN4035-600G 40A SCRs MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 40 600 35 Unit A V mA G A K A DESCRIPTION The TN4035-600G is designed for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies. Using clip assembly technology, provides higher fusing threshold than wires. Mounting precautions detailled in application note AN533 on www.st.com. K A G D2PAK ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage F = 60 Hz tp = 20 µs tp = 8.3 ms tp = 10 ms Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tc = 95°C Tc = 95°C Tj = 25°C Value 40 25 480 460 1060 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Unit A A A I ²t dI/dt IGM PG(AV) Tstg Tj VRGM April 2004 - Ed: 3 1/5 TN4035-600G ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 80 A Gate open Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs RL = 3.3 kΩ Gate open T...




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