Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP18N20Z(G)/TMPF18N20Z(G)
BVDSS 200V
N-channel
MOSFET ID RDS(on)MAX 18A <0.17W
Device TMP18N20Z / TMPF18N20Z TMP18N20ZG / TMPF18N20ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Marking TMP18N20Z / TMPF18N20Z TMP18N20ZG / TMPF18N20ZG
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP18N20Z(G) TMPF18N20Z(G) 200 ±30
18 18 * 9 9* 72 72 *
380 18 9.4 94 30.4 0.75 0.24 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP18N20Z(G) 1.33 62.5
May 2012 : Rev0
www.trinnotech.com
TMPF18N20Z(G) 4.1 62.5
Unit ℃/W ℃/W
1/7
TMP18N20Z(G)/TMPF18N20Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Tes...