N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TOSHIBA MOS MEMORY PRODUCT
32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM272...
Description
TOSHIBA MOS MEMORY PRODUCT
32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27256AD-15, TMM27256AD-150
SILICON STACKED GATE MOS
TMM27256AD-20, TMM27256AD-200
DESCRIPTION
The TMM2 7256AD is a 32,768 word x 8 bit ultraviolet light erasable and electrically programmable read only memory,
For read operation, the TMM27256AD's access time is 150ns/200ns, and the TMM27256AD operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing a'ccess time, The standby
mode is achieved by applying a TIL-high level signal to the CE input.
For program operation, the programming is achieved by using the high speed programming mode.
The TMM27256AD is fabricated with the N-channel silicon double layer gate MaS technology,
FEATURES
I Vee
~lee2 Icel
I-15
-20
5V±5%
I150ns
200ns
100mA
30mA
I-150
-200
5V±10%
150ns , 200ns
120mA
35mA
Full static operation High speed programmin...
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