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TMM27256AD-20 Datasheet

Part Number TMM27256AD-20
Manufacturers Toshiba
Logo Toshiba
Description N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet TMM27256AD-20 DatasheetTMM27256AD-20 Datasheet (PDF)

TOSHIBA MOS MEMORY PRODUCT 32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM27256AD-15, TMM27256AD-150 SILICON STACKED GATE MOS TMM27256AD-20, TMM27256AD-200 DESCRIPTION The TMM2 7256AD is a 32,768 word x 8 bit ultraviolet light erasable and electrically programmable read only memory, For read operation, the TMM27256AD's access time is 150ns/200ns, and the TMM27256AD operates from a single 5-volt power supply and has low power standby mode which reduce.

  TMM27256AD-20   TMM27256AD-20






Part Number TMM27256AD-200
Manufacturers Toshiba
Logo Toshiba
Description N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet TMM27256AD-20 DatasheetTMM27256AD-200 Datasheet (PDF)

TOSHIBA MOS MEMORY PRODUCT 32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM27256AD-15, TMM27256AD-150 SILICON STACKED GATE MOS TMM27256AD-20, TMM27256AD-200 DESCRIPTION The TMM2 7256AD is a 32,768 word x 8 bit ultraviolet light erasable and electrically programmable read only memory, For read operation, the TMM27256AD's access time is 150ns/200ns, and the TMM27256AD operates from a single 5-volt power supply and has low power standby mode which reduce.

  TMM27256AD-20   TMM27256AD-20







N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

TOSHIBA MOS MEMORY PRODUCT 32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM27256AD-15, TMM27256AD-150 SILICON STACKED GATE MOS TMM27256AD-20, TMM27256AD-200 DESCRIPTION The TMM2 7256AD is a 32,768 word x 8 bit ultraviolet light erasable and electrically programmable read only memory, For read operation, the TMM27256AD's access time is 150ns/200ns, and the TMM27256AD operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing a'ccess time, The standby mode is achieved by applying a TIL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed programming mode. The TMM27256AD is fabricated with the N-channel silicon double layer gate MaS technology, FEATURES I Vee ~lee2 Icel I-15 -20 5V±5% I150ns 200ns 100mA 30mA I-150 -200 5V±10% 150ns , 200ns 120mA 35mA • Full static operation • High speed programmin.


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