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TK5A60D Datasheet

Part Number TK5A60D
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet TK5A60D DatasheetTK5A60D Datasheet (PDF)

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60D,ITK5A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuo.

  TK5A60D   TK5A60D






Part Number TK5A60D
Manufacturers Toshiba
Logo Toshiba
Description N-Channel MOSFET
Datasheet TK5A60D DatasheetTK5A60D Datasheet (PDF)

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A 3.9 3.0 Unit: mm 2.7 ± 0.2 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 Absolute Maximum Ratings (Ta = 25°C) Characte.

  TK5A60D   TK5A60D







N-Channel MOSFET

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60D,ITK5A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.57 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60D,ITK5A60D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=2.5A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSDF Diode forward voltage IDR =5A, VGS = 0 V MIN TYP MAX UNIT 600 V 2.4 4.4 V 1200 1430 mΩ ±1 μA 10 μA 1.7 V NOTICE: ISC reser.


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