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TIP127 Datasheet

Part Number TIP127
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet TIP127 DatasheetTIP127 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V(Min.) TIP127 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEB0 Collector Current DC Pules IC ICP Base Current Collector Power Dissipation (Tc=25 ) IB PC Juncti.

  TIP127   TIP127






Part Number TIP127
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
Datasheet TIP127 DatasheetTIP127 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A ·Complement to Type TIP122 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TIP127 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RAT.

  TIP127   TIP127







Part Number TIP127
Manufacturers SavantIC
Logo SavantIC
Description Silicon PNP Darlington Power Transistors
Datasheet TIP127 DatasheetTIP127 Datasheet (PDF)

SavantIC Semiconductor Silicon PNP Darlington Power Transistors Product Specification TIP125/126/127 DESCRIPTION ·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP125 VCBO Coll.

  TIP127   TIP127







Part Number TIP127
Manufacturers SemiHow
Logo SemiHow
Description PNP Transistor
Datasheet TIP127 DatasheetTIP127 Datasheet (PDF)

TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP125 : TIP126 : TIP127 VCBO -60 -80 -100 V V V Collector-Emitter Voltage : TIP125 .

  TIP127   TIP127







Part Number TIP127
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Plastic Medium-Power Complementary Silicon Transistors
Datasheet TIP127 DatasheetTIP127 Datasheet (PDF)

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Ad.

  TIP127   TIP127







Part Number TIP127
Manufacturers TAITRON
Logo TAITRON
Description Darlington PNP Power Transistors
Datasheet TIP127 DatasheetTIP127 Datasheet (PDF)

Darlington Power Transistors (PNP) TIP125/126/127 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP125 VCBO VCEO VEBO IC ICM IB Collector-Base Voltage Collector-Emitter Voltage Emitter-B.

  TIP127   TIP127







EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V(Min.) TIP127 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEB0 Collector Current DC Pules IC ICP Base Current Collector Power Dissipation (Tc=25 ) IB PC Junction Temperature Tj Storage Temperature Range Tstg RATING -120 -120 -5 -5 -8 -0.12 65 150 -55 150 UNIT V V V A A W EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-100V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 DC Current Gain hFE(1) hFE(2) VCE=-3V, IC=-0.5A VCE=-3V, IC=-3A Collector-Emitter Saturation Voltage VCE(sat)(1) VCE(sat)(2.


2017-08-19 : 2SA1507    MJE243    2N6718    2N6727    TIP127L    TIP127    2N6718    2N6716    2N6717    2N6718   


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