JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TIP120F,121F,122F DARLINGTON...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN)
TO-220F
TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP)
FEATURES Medium Power Complementary Silicon Transistors
1.BASE
2.COLLECTOR
3.EMITTER
123
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO VCEO VEBO IC PC RθJA RθJC TJ Tstg
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
TIP120F TIP125F
60 60
TIP121F TIP126F
80 80 5 5 2 62.5 1.92 150 -55~+150
TIP122F TIP127F
100 100
Unit
V V V A W ℃/W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown
voltage TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
Collector-emitter breakdown
voltage TIP120F,TIP125F
TIP...