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TIM6472-8UL

Part Number	TIM6472-8UL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Features	n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHE...
Published	Mar 12, 2007
Datasheet	TIM6472-8UL PDF File

Features

n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compressi...

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