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TIM1011-4L

Toshiba Semiconductor
Part Number TIM1011-4L
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Features „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MAT...
Published Sep 6, 2007
Datasheet PDF File TIM1011-4L PDF File


TIM1011-4L
TIM1011-4L


Features
„ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point P...



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