TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Description
TH58NVG1S3AFT05
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2GBIT (256M u 8BITS) CMOS NAND E2PROM DESCRIPTION
The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static ...
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