TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 38 dBm Nominal ...
TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical
Primary Applications
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Defense & Aerospace Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-01 typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-01 appropriate for high efficiency applications. Lead-free and RoHS compliant .
Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] Apr 2011 © Rev D
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
Table I Absolute Maximum Ratings 1/
Symbol
Vd Vg Vdg Id Ig Pin Tch 1/ Drain
Voltage Gate
Voltage Range Drain-Gate
Voltage Drain Current Gate Current Input Continuous Wave Power Channel Temperature
TGF2023-01
Notes
2/
Parameter
...
