TGF2022-60

Product Datasheet September 7, 2007 DC - 20 GHz Discrete power pHEMT TGF2022-60 Key Features and Performance Frequency Range: DC - 20 GHz > 38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high reliability applications 6.0mm x 0.35um Power pHEMT Nominal Bias Vd = 8-12V, Idq = 448-752mA (Under RF Drive, Id rises from 448mA to 1480mA) Chip Dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in) Product Description The TriQuint TGF2022-60 is a discrete 6.0 mm pHEMT which operates from DC-20 GHz. The TGF2022-60 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-60 typically provides > 38 dBm of saturated output power with power gain of 12 dB. The The maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications. The TGF2022-60 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-60 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications www.DataSheet.net/ 35 30 Maximum Gain (dB) 25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG Frequency (GHz) 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev - Datasheet pdf - http://www.DataSheet4U.co.kr/ ...