Features
• 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperatu...
Features
600V Fast Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN40N60F2DS
Field Stop Trench IGBT
E GC
Device TGAN40N60F2DS
Package TO-3PN
Marking TGAN40N60F2DS
Absolute Maximum Ratings
Parameter
Collector-Emitter
Voltage
Gate-Emitter
Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Power Dissipation
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF
PD
TJ TSTG TL
Value
600 ±20 80 40 120 20 236 94 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.53 1.12 40
December 2015. Rev 0.0
www.trinnotech.com
Remark RoHS
Unit V V A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGAN40N60F2DS
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Collector – Emitter Breakdown
Voltage BVCES
Zero Gate
Voltage Collector Current Gate –...