Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Features: 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification
Applications : Induction Heating, Soft Switching Application, UPS, Welder, Inverter
TGAN20N135FD
Field Stop Trench IGBT
E GC
Device TGAN20N135FD
Package TO-3PN
Marking TGAN20N135FD
Absolute Maximum Ratings
Parameter
Collector-Emitter
Voltage
Gate-Emitter
Voltage Continuous Collector Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF
PD
TJ TSTG TL
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RθJC (IGBT) RθJC (DIODE)
RθJA
Value 1350 ±20
40 20 60 20 223 86 -55 ~ 150 -55 ~ 150 300
Value 0.56
3 40
Remark RoHS
Unit V V A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
Dec. 2013 : rev 0.1
www.trinnotech.com
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TGAN20N135FD
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown
Voltage Zero Gate
Voltage Collector Cur...