Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeff...
Features: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification
Applications : Induction Heating, Soft switching application
TGAN20N120FD
Field Stop Trench IGBT
E GC
Device TGAN20N120FD
Package TO-3PN
Marking TGAN20N120FD
Absolute Maximum Ratings
Parameter
Collector-Emitter
Voltage
Gate-Emitter
Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Diode Continuous Forward Current
TC = 100 ℃
Power Dissipation
TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF IFM
PD
TJ TSTG TL
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Value 1200 ±20
40 20 60 20 60 223 86 -55 ~ 150 -55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.56 3 40
Oct. 2013 : Rev1.1
www.trinnotech.com
Remark RoHS
Unit V V A A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGAN20N120FD
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown
Voltage Zero ...