TESDUB24V

Small Signal Product TESDUB5V0/12V/24V Taiwan Semiconductor Bi-directional ESD Protection Diode FEATURES - Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Protects one Bi-directional I/O line - Low clamping voltage - Working Voltage : 5, 12 and 24V - High component density - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 0603-B MECHANICAL DATA Case: 0603-B standard package molded plastic Terminals: Gold plated, solderable per MIL-STD-750, method 2026 d Weight: 3 mg (approximately) ende MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX TESDUB5V0 5.1 7 - m Diode breakdown voltage TESDUB12V IR=1mA VBO 13 17 - TESDUB24V 25 28 - TESDUB5V0 VR=5V - 0.1 2 m Leakage current TESDUB12V VR=12V IL - - - o TESDUB24V VR=24V - - - ec Junction capacitance TESDUB5V0 TESDUB12V TESDUB24V VR=0V, f=1MHz - 15 20 CT - 12 - - 10 - R ESD capability IEC 61000-4-2 (air) IEC 61000-4-2 (contact) ESD - - 15 - 8 ot Clamping voltage TESDUB5V0 IPP=5A, TP=8/20μs TESDUB12V IPP=1A, TP=8/20μs Vc TESDUB24V IPP=1A, TP=8/20μs - - 15 - - 25 - - 47 N TESDUB5V0 - - 75 Peak pulse power TESDUB12V TP=8/20μs PPP - - 25 TESDUB24V - - 47 Junction temperature range TJ -55 to +125 Storage temperature range TSTG -55 to +150 UNIT V μA pF KV V W °C °C Version: C1601 Small Signal Produ...