E
28F010 1024K (128K X 8) CMOS FLASH MEMORY
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Puls...
E
28F010 1024K (128K X 8)
CMOS FLASH MEMORY
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program 2 Second Chip-Program
n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read
90 ns Maximum Access Time
n
CMOS Low Power Consumption
10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller Compatible Write Interface
n Noise Immunity Features
±10% VCC Tolerance Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base High-Volume Manufacturing
Experience
n JEDEC-Standard Pinouts
32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec., Order #231369)
n Extended Temperature Options
Intel’s 28F010
CMOS flash memory offers the most cost-effect...
