T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3532 uses advanced trench technology...
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3532 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 3mΩ @ VGS=4.5V RDS(ON) < 1.9mΩ @ VGS=10V
High Power and current handling capability Lead free product is available Surface Mount Package
Application
PWM applications Load switch Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source
Voltage
VDS
Gate‐Source
Voltage
VGS
Diode Continuous Forward Current Drain Current @ Continuous(Note 1)
IS(TC=25℃) ID(TC=25℃) ID(TC=100℃)
Drain Current @ Current‐Pulsed (Note 2)
IDM(TC=25℃)
Maximum Power Dissipation...