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TC59 Datasheet

Part Number TC59
Manufacturers Microchip Technology
Logo Microchip Technology
Description Low Dropout / Negative Output Voltage Regulator Designed Specifically
Datasheet TC59 DatasheetTC59 Datasheet (PDF)

TC59 Low Dropout, Negative Output Voltage Regulator Features • Low Dropout Voltage - Typically 120mV @ 50mA; 380mV @ 100mA for -5.0V Output Part • Tight Output Voltage Tolerance: ±2% Max • Low Supply Current: 3.5µA, Typ • Small Package: 3-Pin SOT-23A General Description The TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced supply curren.

  TC59   TC59






Part Number TC5V6
Manufacturers Tak Cheong
Logo Tak Cheong
Description 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
Datasheet TC59 DatasheetTC5V6 Datasheet (PDF)

SEMICONDUCTOR 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Absolute Maximum Ratings Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted Value 500 -65 to +175 +175 Units mW °C °C L : Logo Device Code : TCxxx DEVICE MARKING DIAGRAM L xx x These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Zener Voltage Ran.

  TC59   TC59







Part Number TC5V1
Manufacturers Tak Cheong
Logo Tak Cheong
Description 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
Datasheet TC59 DatasheetTC5V1 Datasheet (PDF)

SEMICONDUCTOR 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Absolute Maximum Ratings Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted Value 500 -65 to +175 +175 Units mW °C °C L : Logo Device Code : TCxxx DEVICE MARKING DIAGRAM L xx x These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Zener Voltage Ran.

  TC59   TC59







Part Number TC5A4V
Manufacturers Topstek
Logo Topstek
Description Current Transducers
Datasheet TC59 DatasheetTC5A4V Datasheet (PDF)

Topstek Current Transducer TC5A .. TC50A TC 5A~50A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide input range ♦ Excellent frequency response (> 50 kHz) ♦ Low power consumption (9 mA nominal) ♦ Capable of measuring both DC and AC, both pulsed and mixed ♦ High isolation voltage between the measuring circuit and the current-carrying conductor (AC2.5KV) ♦ Extended operating temperature range ♦ Fl.

  TC59   TC59







Part Number TC59YM916BKG40C
Manufacturers Toshiba America Electronic
Logo Toshiba America Electronic
Description 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
Datasheet TC59 DatasheetTC59YM916BKG40C Datasheet (PDF)

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differe.

  TC59   TC59







Part Number TC59YM916BKG40B
Manufacturers Toshiba America Electronic
Logo Toshiba America Electronic
Description 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
Datasheet TC59 DatasheetTC59YM916BKG40B Datasheet (PDF)

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differe.

  TC59   TC59







Low Dropout / Negative Output Voltage Regulator Designed Specifically

TC59 Low Dropout, Negative Output Voltage Regulator Features • Low Dropout Voltage - Typically 120mV @ 50mA; 380mV @ 100mA for -5.0V Output Part • Tight Output Voltage Tolerance: ±2% Max • Low Supply Current: 3.5µA, Typ • Small Package: 3-Pin SOT-23A General Description The TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced supply current significantly extends battery life, particularly when the TC59 is operated in dropout. Other TC59 key features include low supply current (typically 3.0µA) and low dropout operation (typically 120mV at 50mA). The TC59 is packaged in a small 3-Pin SOT-23A package. Applications • • • • Cellular Phones Battery Operated Systems Palmtops Portable Cameras Functional Block Diagram Device Selection Table Part Number TC593002ECB TC595002ECB Output Voltage 3.0V 5.0V Package Temperature Range -VOUT 1 -VOUT 1µF 3 VSS TC59 -VIN 2 -VIN 1µF 3-Pin SOT-23A -40°C to +85°C 3-Pin SOT-23A -40°C to +85°C Other output voltages are available. Please contact Microchip Technology Inc. for details. _ + _ + Package Type 3-Pin SOT-23A VSS 4 TC59 1 -VOUT 2 -VIN NOTE: 3-Pin SOT-23A is equivalent to the EIAJ SC59 © 2002 Microchip Technology Inc. DS21438B-page 1 TC59 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage ..-12V Out.


2006-04-17 : TC59RM716RB    TC59RM718MB    TC59RM718RB    TC59LM913AMB    TC59LM814CFT    TC593002    TC595002    CTGxxS    TC59S6408BFT    TC59S6408BFTL   


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